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IGBT Module
Preliminary Data Sheet
S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3 V6 N15 V9 V10 Q1 N1
PSII 75/12*
IC80 = VCES = VCE(sat)typ. =
ECO-TOPTM 1
60 A 1200 V 2.7 V
IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol Conditions Maximum Ratings 1200 TVJ = 25C to 150C V
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
t ee hr se ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev
*NTC optional
20 V TC = 25C TC = 80C 90 60 A A VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 100 VCES A VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C 10 s W 379
typical picture, for pin configuration see outline drawing
Features
* * * * * * * * * * * * * * *
Conditions
(TVJ
Characteristic Values = 25C, unless otherwise specified) min. typ. max. 2.7 3.0 3.2
IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 2 mA; VGE = VCE VCE = VCES;
V V
4.5
6.5
V
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied
VGE = 0 V; TVJ = 25C TVJ = 125C
3.7 12.5 200
mA mA
Applications
VCE = 0 V; VGE = 20 V
nA
Inductive load, TVJ = 125C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22
100 70 500 70 9.1 6.7 3.3
ns ns ns ns mJ mJ
AC and DC motor control AC servo and robot drives Power supplies Welding inverters
Advantages
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
nF 0.33 K/W K/W
0.66
Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 60 A; TVJ = 25C TVJ = 125C Maximum Ratings 100 60 A A
Characteristic Values min. typ. max. 2.28 1.67 41 200 1.32 2.6 V V A ns 0.66 K/W K/W
IF = 60 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight
Package style and outline
et e sh er ta nd au dl ve stil ent ti t ta c n u opm te od el r ev pd
Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Conditions Maximum Ratings -40...+125 -40...+150 3000 C C IISOL 1 mA; 50/60 Hz Mounting torque (M5) V~ Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Conditions Characteristic Values min. typ. max. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 mm mm g 86
Dimensions in mm (1mm = 0.0394")
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
120
A
TJ = 25C
VGE =17 V 15 V 13 V 11 V
100
IC
120 A TJ = 125C 100 IC 80 60 40
VGE =17 V 15 V 13 V 11 V
80 60 40
9V
9V
20 0 0,0
81T120
20
0,5
1,0
Fig. 1 Typ. output characteristics
120
A
VCE = 20 V TJ = 25C
100
IC
80 60 40 20 0
5
6
Fig. 3 Typ. transfer characteristics
20
V VGE
t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev
1,5 2,0 2,5 3,0 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V
VCE VCE
0
81T120
Fig. 2 Typ. output characteristics
180 A 150 120 90 60 30
TJ = 125C
IF
TJ = 25C
81T120
0
DWLP55-12
7
8
9
10
11 V
0,5
1,0
1,5
2,0
2,5
3,0 V
3,5
VGE
VF
Fig. 4 Typ. forward characteristics of free wheeling diode
120
A
300
ns
15
VCE = 600 V IC = 50 A
IRM
trr
80
200
trr
10 40 5
IRM TJ = 125C VR = 600 V IF = 50 A
100
0
81T120
0
50
100
150
200
QG
250 nC
0
81T120
0
200
400
600
800 A/s
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
24
mJ Eon
120 ns td(on) 90 t Eoff
12
mJ
600 Eoff ns 500 td(off) 400 t
VCE = 600 V VGE = 15 V RG = 22 TJ = 125C
10 8 6 4
18
12
tr
60
VCE = 600 V VGE = 15 V RG = 22 TJ = 125C
81T120
300 200 tf
81T120
6
Eon
30
2
0
100 0
0
0
Fig. 7 Typ. turn on energy and switching
20
mJ V = 15 V GE Eon 15
IC = 50 A TJ = 125C
VCE = 600 V
10
5
0
0 10 20 30 40 50 60 70 80 90 100
RG
Fig. 9 Typ. turn on energy and switching
120
A
et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd
20 40 60 80 100 A 0
0 20 40 60 80 IC IC 240 ns
100 A
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
td(off) Eoff 1500 ns 1200 t 900 600 300
81T120
10
td(on) Eon
mJ VCE = 600 V
180
t
Eoff
8 6 4 2 0
VGE = 15 V IC = 50 A TJ = 125C
tr
120
60
81T120
0
tf
0 10 20 30 40 50 60 70 80 90 100
RG
0
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
1
100
ICM
K/W 0,1
80 60 40 20 0
81T120
ZthJC
RG = 22 TJ = 125C VCEK < VCES
0,01 0,001 0,0001
diode
IGBT
single pulse
VID...75-12P1
0
200
400
600
800 1000 1200 V
VCE
0,00001 0,00001 0,0001
0,001
0,01 t
0,1
s
1
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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